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Creators/Authors contains: "Knobloch, Theresia"

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Enormous Out-of-Plane Charge Rectification and Conductance through Two-Dimensional Monolayers

https://doi.org/10.1021/acsnano.4c15271

Cabanillas, Anthony; Shahi, Simran; Liu, Maomao; Jaiswal, Hemendra Nath; Wei, Sichen; Fu, Yu; Chakravarty, Anindita; Ahmed, Asma; Liu, Xiaochi; Sun, Jian; et al (January 2025, ACS Nano)

Free, publicly-accessible full text available January 28, 2026
A stochastic encoder using point defects in two-dimensional materials

https://doi.org/10.1038/s41467-024-54283-1

Ravichandran, Harikrishnan; Knobloch, Theresia; Subbulakshmi_Radhakrishnan, Shiva; Wilhelmer, Christoph; Stepanoff, Sergei P; Stampfer, Bernhard; Ghosh, Subir; Oberoi, Aaryan; Waldhoer, Dominic; Chen, Chen; et al (December 2024, Nature Communications)

Free, publicly-accessible full text available December 1, 2025
Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

https://doi.org/10.1038/s41928-024-01233-w

Shen, Yaqing; Zhu, Kaichen; Xiao, Yiping; Waldhör, Dominic; Basher, Abdulrahman H; Knobloch, Theresia; Pazos, Sebastian; Liang, Xianhu; Zheng, Wenwen; Yuan, Yue; et al (October 2024, Nature Electronics)

Full Text Available
Observation of Rich Defect Dynamics in Monolayer MoS ₂

https://doi.org/10.1021/acsnano.2c12900

Ravichandran, Harikrishnan; Knobloch, Theresia; Pannone, Andrew; Karl, Alexander; Stampfer, Bernhard; Waldhoer, Dominic; Zheng, Yikai; Sakib, Najam U; Karim Sadaf, Muhtasim Ul; Pendurthi, Rahul; et al (August 2023, ACS Nano)

Full Text Available
Transistors based on two-dimensional materials for future integrated circuits

https://doi.org/10.1038/s41928-021-00670-1

Das, Saptarshi; Sebastian, Amritanand; Pop, Eric; McClellan, Connor J.; Franklin, Aaron D.; Grasser, Tibor; Knobloch, Theresia; Illarionov, Yury; Penumatcha, Ashish V.; Appenzeller, Joerg; et al (November 2021, Nature Electronics)

Full Text Available